研究目的
Investigating the stability and noise characteristics of field emission currents from p-type and metallized silicon emitters in the frequency domain.
研究成果
The p-type silicon emitters showed stable and low noise field emission in the saturation region, while metallized emitters required current regulation for similar stability. The study successfully emulated unstable emission behavior to evaluate the performance of a current regulation circuit.
研究不足
The study was limited by the resolution of the measurement equipment and potential improper cabling effects in the test setup.
1：Experimental Design and Method Selection:
The study involved fabricating and characterizing two types of silicon field emitter arrays (FEAs) under different conditions.
2：Sample Selection and Data Sources:
Samples included p-type silicon and undoped Au-coated silicon substrates.
3：List of Experimental Equipment and Materials:
High aspect ratio silicon tip structures, mica spacer, grid anode, and a vacuum setup.
4：Experimental Procedures and Operational Workflow:
Conditioning of samples, I-V measurements, short-term stability measurements, and frequency domain analysis.
5：Data Analysis Methods:
Use of FFT for frequency domain analysis and comparison of emission current stability and noise levels.
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