研究目的
Investigating the properties of a high-resolution electron beam using a CNT cold cathode for microscope applications, focusing on the relationship between electron beam properties and the geometric factor of CNT cold cathodes.
研究成果
High-resolution electron sources prepared with CNT cold cathodes exhibited a reduced brightness of 1.42 × 1011 A·m-2sr-1V-1 at 1,100V, demonstrating the dependency of beam brightness on the geometric factor of the CNT emitter. This suggests that smaller tip emitters with higher geometric factors can achieve higher brightness, suitable for high-resolution applications.
研究不足
The study is limited by the specific geometric factors of the CNT emitters used and the conditions under which the electron emission properties were evaluated. Potential areas for optimization include the uniformity of CNT growth and the stability of emission currents.
1：Experimental Design and Method Selection:
The study involved the fabrication of three different groups of CNT emitters with varying geometric factors to evaluate electron emission and beam brightness.
2：Sample Selection and Data Sources:
Direct-grown CNT emitters on heavily doped Si substrates were used, with a single dot pattern formed at the center.
3：List of Experimental Equipment and Materials:
A DC-PECVD system was used for CNT growth, with ammonia and acetylene gas as feed.
4：Experimental Procedures and Operational Workflow:
Electron emission properties were evaluated in a base vacuum of 2 × 10-7 Torr, with reduced beam brightness estimated from emission patterns.
5：Data Analysis Methods:
The angular current density and virtual source size were calculated, and beam brightness was analyzed with field enhancement factors extracted from Fowler-Nordheim plots.
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