研究目的
Investigating the field emission energy distributions from planar graphene edges and comparing the emission spectra produced by CVD graphene and RGO.
研究成果
Planar vacuum diodes and transistors patterned on dielectric substrates using conventional lithographic methods and having graphene edge field emission sources are fabricated and characterized. Emission spectra produced by CVD graphene and RGO are compared. The field emission energy distributions produced by both the CVD graphene and the RGO contain nearly symmetric components, indicating some or all of the emission comes from discrete edge states. The distributions produced by CVD graphene also contain a component that can be fit using graphene’s linear bands multiplied by the Fermi distribution, indicating emission from the delocalized bands.
研究不足
The study is limited to the comparison of emission spectra produced by CVD graphene and RGO, and does not explore other types of graphene or emission sources.
1：Experimental Design and Method Selection:
Fabrication of field effect transistors with integrated gate and drain electrodes using graphene edge emission sources prepared from two types of graphene (CVD graphene and RGO).
2：Sample Selection and Data Sources:
Single layer graphene grown by CVD on copper and transferred to the dielectric substrate, and Reduced Graphene Oxide (RGO) made by spinning a slurry of graphene oxide on the device substrate then heating in UHV to remove the oxygen.
3：List of Experimental Equipment and Materials:
Vacuum chamber equipped with an energy analyzer, optical images of the device, Raman spectra of the CVD graphene.
4：Experimental Procedures and Operational Workflow:
Characterizing the devices by probing the wafer inside a vacuum chamber at pressures <10-6 Pa, measuring IDS-VDS curves, and analyzing field emission energy distributions.
5：Data Analysis Methods:
Fitting the data using the linear density of states and Fermi function, plus a gauss function for the highest current spectrum.
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