研究目的
Investigating the properties of single n- and p-type black silicon (b-Si) pillars under strong electric field and halogen lamp or laser illumination.
研究成果
The study demonstrated the importance of processing not only a single b-Si pillar structure but also the whole b-Si pillar array to increase its efficiency. Several μA of emission can be extracted from a single n-type b-Si pillar, sufficient for image sensor applications. P-type b-Si pillars showed excellent stability in the saturation region and sensitivity to light illumination, making them interesting for fast and high brightness electron sources and sensors.
研究不足
The study is limited to single n- and p-type b-Si pillar structures and does not cover the behavior of entire arrays under similar conditions.
1：Experimental Design and Method Selection:
The study involved measuring current-voltage (I-V) characteristics of single n- and p-type b-Si pillars under ultra-high vacuum conditions with a tungsten needle anode.
2：Sample Selection and Data Sources:
The samples were black Si field emitter arrays fabricated from moderately P(B)-doped Si wafers.
3：List of Experimental Equipment and Materials:
Tungsten needle anode, halogen lamp (KL 1500 LCD, 150 W), laser source, Si photodiode (Thorlabs FDS10×10).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The gap between anode and cathode surface was controlled by μm-resolution optical microscopes. I-V measurements were performed under ultra-high vacuum conditions.
5：Data Analysis Methods:
The effective field enhancement factor was extracted from the linear region of the Fowler-Nordheim plot.
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