研究目的
Investigating the superior analog and RF Figure of Merits (FOMs) of 4H-SiC Trench Gate (Recessed Channel) (4H-SiC-RC) MOSFET structure by numerical simulation.
研究成果
The 4H-SiC-RC MOSFET structure demonstrates superior analog and RF performance, making it suitable for high switching, high power, and high-frequency applications. The integration of 4H-SiC with phosphorene contact significantly improves electrical parameters and RF FOMs compared to conventional designs.
研究不足
The study is based on numerical simulation, and actual fabrication and testing may reveal additional challenges or limitations not accounted for in the simulation.
1：Experimental Design and Method Selection:
Numerical simulation was used to assess the analog and RF FOMs of the 4H-SiC-RC MOSFET structure.
2：Sample Selection and Data Sources:
The study compared the 4H-SiC-RC MOSFET with conventional designs (CRC and PS-RC MOSFETs).
3：List of Experimental Equipment and Materials:
The simulation models included Parallel Electric Field Dependence (fldmob model) and concentration-dependent Klaassen Shockley-Read-Hall Recombination model (klasrh model).
4：Experimental Procedures and Operational Workflow:
Gate bias was swept from 0 to
5：5 V during measurement. Data Analysis Methods:
The study evaluated electrical parameters such as drain current, switching ratio, sub-threshold slope, electric field, electron mobility, and electron velocity.
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