研究目的
To present several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN based high-electron mobility transistor (HEMT) grown on SiC substrate and to analyze the thermal properties of these devices.
研究成果
The study confirms the validity of the proposed methodologies and model parameters for thermal analysis of power HEMTs. The analysis contributes to the optimization of power transistor structures in respect to the geometry of layers design and their thermal parameters.
研究不足
The micro-Raman technique can only be used for open or window packaged devices without metal air bridges between source/drain fingers or a source/gate field plate. The thermistor dimension is large compared to the GTLM topology, limiting its placement.
1：Experimental Design and Method Selection:
The study employs micro-Raman spectroscopy, electrical I-V characteristics of neighboring Schottky diodes, and micro thermistors for temperature measurement.
2：Sample Selection and Data Sources:
The structure under investigation is a
3：5 nm GaN-cap/5 nm Al29Ga71N-barrier/50 nm GaN-spacer/1650 nm GaN-doped heterostructure grown on 500 μm 4H-SiC substrate. List of Experimental Equipment and Materials:
MonoVista 750 CRS system for Raman spectra recording, MURATA NCP03WB473J05RL micro thermistor, and Sentaurus Device Editor for 3-D model creation.
4：Experimental Procedures and Operational Workflow:
Calibration measurements for Raman shift and Schottky diode characteristics, followed by temperature measurements at various locations for different dissipated powers.
5：Data Analysis Methods:
Temperature distribution analysis using 3-D device simulations and comparison with experimental results.
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