研究目的

Investigating the binding energies of the s-symmetric ground and first excited shallow donor impurity states and the total 1s → 2s absorption coefficient in "12-6" tuned GaAs/GaAlAs double quantum well under the influence of external fields.

研究成果

The electronic and optical properties of tuned GaAs/GaAlAs double quantum well can be adjustable by an appropriate choice of the sample geometry, material parameters and applied external fields, leading to new potential applications in optoelectronics. The results may be useful in the exploration of new ways to manipulate the opto-electronic properties of quantum-well devices.

研究不足

The model's simplicity may hinder its direct comparison with any particular experimental dataset but lends generality to the observations. The methodology, despite its simplicity, is useful to explain the optical properties associated with the active region in quantum cascade laser devices and in solid state lasers with intentional doping.