研究目的
Investigating the influence of blending ratio on resistive switching effect in donor-acceptor type composite of PCBM and PVK-based memory devices.
研究成果
The ITO/PCBM + PVK/Al devices exhibited WORM memory property, with the OFF/ON resistance ratio and threshold voltage dependent on the PCBM content. The carrier transport mechanism transitions from SCLC conduction in the HRS to Ohmic process in the LRS, attributed to the electric-field-induced charge transfer complex between PCBM and PVK. This work suggests potential applications in adjustable OFF/ON resistance ratio and threshold voltage for electronic memory devices.
研究不足
The study focuses on the influence of blending ratio on resistive switching effect but does not explore the long-term stability under operational conditions or the scalability of the devices for industrial applications.
1：Experimental Design and Method Selection:
The study investigates the resistive switching effect in donor-acceptor type composite of PCBM and PVK-based memory devices. The methodology includes the preparation of composite films with different PCBM concentrations and the measurement of their electrical properties.
2：Sample Selection and Data Sources:
The samples are ITO/PCBM + PVK/Al devices with different PCBM concentrations (9 wt.%, 23 wt.%, and 41 wt.%). Data are collected through electrical measurements.
3：List of Experimental Equipment and Materials:
PCBM and PVK were purchased from Sigma-Aldrich. The devices were fabricated using ITO-coated glass substrates, and the electrical properties were measured using a Keithley 4200 semiconductor analyzer.
4：Experimental Procedures and Operational Workflow:
The composite films were spin-coated on ITO substrates, annealed, and then aluminum electrodes were thermally evaporated. The electrical properties were measured under DC sweeping voltages.
5：Data Analysis Methods:
The I-V characteristics were analyzed to understand the resistive switching mechanisms, including space-charge-limited-current behaviors and Ohmic laws.
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