研究目的
Investigating the effect of hydrogen on phosphorus-doped polysilicon thin films to improve the crystalline quality and electrical properties for microelectronic and photovoltaic applications.
研究成果
Heat treatments under hydrogen significantly improve the optoelectronic properties of phosphorus-doped poly-silicon thin films, especially at low doping concentrations, by reducing the density of trap states at grain boundaries. A 20% improvement in free carrier concentration was observed for low doping levels.
研究不足
The study focuses on low to moderate doping concentrations, and the effect of hydrogen is less pronounced at higher doping levels due to phosphorus segregation at grain boundaries.
1：Experimental Design and Method Selection:
Polycrystalline silicon thin films were deposited by low-pressure chemical vapor deposition (LPCVD) at 620°C by silane (SiH4) decomposition. The samples were implanted with phosphorus ions and subjected to heat treatments under nitrogen or hydrogen.
2：Sample Selection and Data Sources:
0.7 μm thick polycrystalline silicon films implanted with phosphorus ions at doses from 2×10^14 to 10^16 cm^-
3：7 μm thick polycrystalline silicon films implanted with phosphorus ions at doses from 2×10^14 to 10^16 cm^-List of Experimental Equipment and Materials:
2.
3. List of Experimental Equipment and Materials: LPCVD system for film deposition, equipment for phosphorus ion implantation, and annealing setup.
4：Experimental Procedures and Operational Workflow:
Films were heat-treated at 1100°C for 30 min followed by annealing at 450°C for 30 min under nitrogen or hydrogen.
5：Data Analysis Methods:
Hall effect and resistivity measurements were used to characterize the films.
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