研究目的
Investigating the effects of B-doping and annealing treatment on the properties of B and Ga co-doped ZnO films.
研究成果
The study concludes that B-doping and annealing improve the crystallinity, electrical, and optical properties of BGZO films, with B-doping enhancing thermal stability.
研究不足
The study focuses on the effects of B-doping and annealing on BGZO films, but does not explore other dopants or deposition methods extensively.
1：Experimental Design and Method Selection:
BGZO films were deposited by RF magnetron sputtering with a ceramic target (98 wt% ZnO,
2：8 wt% Ga2O3 and 2 wt% B2O3, purity 99%). GZO films were also deposited for comparison. Sample Selection and Data Sources:
Films were deposited on quartz sheets substrates.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering system, quartz sheets, ceramic targets.
4：Experimental Procedures and Operational Workflow:
Substrates were cleaned and films were deposited under an Ar atmosphere. Films were annealed in air at different temperatures.
5：Data Analysis Methods:
Structural properties were analyzed by XRD, optical properties by UV–visible spectrophotometer, electrical properties by Hall effect measurement system, and surface morphology by SEM.
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X-ray diffraction
D/MAX-2200 V PC
Rigaku
Analyzing the structural properties of BGZO films
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UV–visible spectrophotometer
UV-2501PC
Shimadzu
Investigating the optical properties of samples
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Hall effect measurement system
HL5500PC
Accent
Measuring the electrical properties
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Scanning electron microscope
MIRA II LMH
TESCAN
Measuring surface morphology
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Secondary ion mass spectroscopy
CAMECA 5F
CAMECA
Determining the composition of films
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