研究目的
Investigating the influence of lateral straggling of implanted aluminum ions on high voltage 4H-SiC device edge termination design.
研究成果
The lateral straggling effect of Aluminum implantation in 4H-SiC significantly impacts the electric field distribution and breakdown voltage of edge termination designs. Multiple floating field rings (FFR) are more sensitive to lateral straggling and interface charges compared to multiple-floating-zone junction termination extension (MFZ-JTE) and hybrid junction termination extension (Hybrid-JTE).
研究不足
The study focuses on devices with background doping concentration lower than 1e15 cm-3 for breakdown voltages higher than 10kV. The impact of lateral straggling may vary with different edge termination designs.
1：Experimental Design and Method Selection:
The study used secondary electron potential contrast (SEPC) method and Sentaurus Monte Carlo simulations to analyze the lateral straggling effect of Aluminum implanted into 4H-SiC.
2：Sample Selection and Data Sources:
A fabricated Junction Barrier Schottky (JBS) diode with background doping concentration of 8e14 cm-3 was used.
3：List of Experimental Equipment and Materials:
Scanning electron microscope (SEM) for SEPC method, Sentaurus TCAD for simulation.
4：Experimental Procedures and Operational Workflow:
The JBS diode was cleaved and placed into the SEM chamber for imaging. Monte Carlo simulations were performed to model the ion implantation profiles.
5：Data Analysis Methods:
The electric field distribution and breakdown voltage of different edge termination designs were compared using Sentaurus TCAD simulation tool.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
