研究目的
To study the radiation damage caused by X-ray to the 45 nm SRAM through experiments and analyze the effects of critical charge and metal interconnect overlayers of different materials.
研究成果
The study concludes that secondary electrons generated by X-rays can cause SEU in 45 nm SRAM devices under low power states. The probability of errors increases as the voltage decreases. The interaction of photons with high atomic number materials in metal interconnect overlayers can generate more secondary electrons, increasing the SEU cross section.
研究不足
The study focuses on 45 nm SRAM devices and the effects of X-ray irradiation under low power states. The findings may not be directly applicable to devices with different feature sizes or under different irradiation conditions.
1：Experimental Design and Method Selection:
The study involved irradiating 45 nm SRAM devices with X-rays to observe the effects of secondary electrons on SEU. The sensitive volume of SRAM was constructed using Monte Carlo radiation transport code Geant
2：Sample Selection and Data Sources:
The test SRAM device used was ISSI61WV204816BLL from ISSI, with a feature size of 45 nm.
3：List of Experimental Equipment and Materials:
Philips DC X-ray machine, laser collimator, aluminum filter, PTW-UNIDOX X-ray and gamma radiation dosimeter.
4：Experimental Procedures and Operational Workflow:
The device was irradiated under low power state with X-rays, and the effects were observed by lowering the voltage and checking for errors.
5：Data Analysis Methods:
Monte Carlo simulation was used to analyze the effects of critical charge and different materials on SEU.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
