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Sharp Skirt Bandpass Filter-Integrated Single-Pole Double-Throw Switch With Absorptive off-State

DOI:10.1109/TMTT.2018.2880914 期刊:IEEE Transactions on Microwave Theory and Techniques 出版年份:2018 更新时间:2025-09-10 09:29:36
摘要: This paper presents a type of bandpass filter (BPF)-integrated single-pole double-throw (SPDT) switch using common shorted stepped-impedance resonator technique. The BPF-integrated ON-state with reverse-biased p-i-n diodes can be synthesized by classical coupled-resonator filter design theory, and the OFF-state with forward-biased p-i-n diodes is detuned which exhibits high OFF-state suppression (OSS). The transmission zeros due to the direct coupled feed, the cross-couplings and the cancelling effect of mixed electric and magnetic coupling are produced to improve the ON-state passband selectivity significantly. As examples, the third-order/fourth-order BPF-integrated SPDT switches at center frequency f0 = 1 GHz with ripple bandwidth of 110/100 MHz are designed, which show low insertion losses of 1.08/1.58 dB, sharp skirts, high roll-off rate of sidebands, high OSSs of 40.9/40.1 dB as well as high port-to-port isolation of 57.4/47.8 dB. Then, the switched 50-(cid:2) matching circuits are in series with two output ports of above BPF-integrated SPDT switches, resulting in the absorptive OFF-state. The fabricated third-order/fourth-order BPF-integrated SPDT switches with absorptive OFF-state have the matched return losses of 30/28.2 dB, and their OSSs and port-to-port isolations are also improved.
作者: Jin Xu,Hao Wan,Zhi-Yu Chen
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To present a type of bandpass filter (BPF)-integrated single-pole double-throw (SPDT) switch using common shorted stepped-impedance resonator technique, achieving low insertion losses, sharp skirts, high roll-off rate of sidebands, high OFF-state suppression (OSS), and high port-to-port isolation.

One third-order BPF-integrated SPDT switch and one fourth-order BPF-integrated SPDT switch selectivity are presented in this paper. By series with switched 50-(cid:2) matching circuits on noncommon ports, the absorptive OFF-state property is also acquired. The proposed BPF-integrated SPDT switches exhibit low ILs, sharp passband selectivity, deep OSSs, high port-to-port isolations, and compact circuit sizes.

The paper does not explicitly mention the limitations of the research.

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