1：Experimental Design and Method Selection:

The study employed solid-source molecular beam epitaxy (MBE) for the growth of InAs/GaSb tunnel diode structures on silicon, utilizing a 200 nm strained GaAs1-ySby dislocation filtering buffer. The methodology included precise control over growth parameters to minimize atomic intermixing and segregation.

2：Sample Selection and Data Sources:

The samples were grown on (100)Si substrates offcut 4? toward the <110> direction. Structural, morphological, and electrical properties were characterized using x-ray diffraction, transmission electron microscopy, atomic force microscopy, and magnetotransport measurements.

3：List of Experimental Equipment and Materials:

Equipment included a PANalytical X’pert Pro system for x-ray analysis, a JEOL 2100 TEM for interface analysis, and an ARS Cryo-made probe station for electrical measurements. Materials included Si substrates, GaAs, GaAs1-ySby, GaSb, and InAs epilayers.

4：Experimental Procedures and Operational Workflow:

The growth process involved a composite buffer scheme to promote film relaxation and minimize dislocations. Post-growth characterization included structural analysis, magnetotransport measurements, and fabrication of tunnel diodes for electrical evaluation.

5：Data Analysis Methods:

Data analysis involved determining strain relaxation properties from x-ray diffraction, evaluating defect density via TEM, and analyzing electrical transport characteristics to understand device performance.