研究目的
Investigating the development of highly piezoelectric ferroelectric semiconductors with low bandgap through defect-engineered perovskite oxides.
研究成果
This research provides a new paradigm for designing highly piezoelectric and visible/near-infrared photoresponsive perovskite oxides for solar energy conversion, near-infrared detection, and other multifunctional applications. The highly piezoelectric and visible/NIR photoresponsive materials have great technological potential for use in optostrictive control, optoelectric devices, multienergy harvester, light emitting diode, and photocatalyst application, etc.
研究不足
The leaky behavior associated with accommodation of Ni2+-oxygen vacancy combinations results in the loss of piezoelectricity especially at room temperature, which is generally the case for simple perovskite oxides.
1：Experimental Design and Method Selection:
The study was inspired by point-defect-mediated large piezoelectricity in ferroelectrics, especially at the morphotropic phase boundary (MPB) region. An efficient strategy was proposed by judiciously introducing gap states at the MPB where defect-induced local polar heterogeneities are thermodynamically coupled with the host polarization.
2：Sample Selection and Data Sources:
A concrete example, Ni2+-mediated (1–x)Na
3：5Bi5TiO3-xBa(Ti5Ni5)O3–δ (x = 02–08) composition was synthesized by solid-state reaction methods. List of Experimental Equipment and Materials:
X-ray diffraction (XRD) and scanning electron microscopy energy dispersive X-ray spectroscopy (EDS) were used to confirm the pure phase and structure.
4：Experimental Procedures and Operational Workflow:
The optical properties of the thick ceramic films were investigated systematically. The bandgap was calculated based on the Kubelka–Munk function.
5：Data Analysis Methods:
Density functional theory (DFT) calculations based on LDA+U method were performed to understand the origin of the defect-engineered three sub-bandgaps.
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