研究目的
To present the fabrication and characterization of a suspended microbridge resonator with an embedded nanochannel, monolithically integrated with CMOS readout circuitry, for high mass sensitivity sensing applications.
研究成果
The fabrication and electrical measurement of a microbridge resonator with a built-in nanochannel, monolithically integrated with CMOS readout circuitry, was successfully demonstrated. The device achieved a mass sensitivity of 25 ag/Hz, comparable to the most sensitive SMRs, with the advantage of using fully integrable electrical transduction methods.
研究不足
The main challenge was to demonstrate that the nanochannel was watertight using standard CMOS technology. The metal and contact layers specified by the AMS 0.35 μm technology were not homogeneous, which could affect the device performance.
1：Experimental Design and Method Selection:
The device was designed as a suspended microbridge resonator with an embedded nanochannel, using the AMS
2：35 μm commercial CMOS technology. The resonator is electrostatically actuated and capacitively sensed. Sample Selection and Data Sources:
The device was fabricated using the back end of line (BEOL) layers of the CMOS technology, interconnecting two metal layers with a contact layer.
3：List of Experimental Equipment and Materials:
AMS
4：35 μm commercial CMOS technology, positive photoresist (Microposit S1813 D1 Photo Resist from Shipley Company Inc.), buffered hydrogen fluoride (BHF) solution, acetone. Experimental Procedures and Operational Workflow:
The resonator was released by etching the silicon dioxide surrounding the stack resonator. The nanochannel was formed by fully etching the interlevel oxide. Access holes were defined at both ends of the bridge. The nanochannel was emptied using a sequence of wet etching with BHF solution.
5：Data Analysis Methods:
The electrical characterization was performed using a network analyzer (E5100A from Agilent). The motional current generated by the resonant SNR was measured using a three-electrode configuration.
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