研究目的
To develop ferroelectric capacitor fabrication techniques to enlarge the narrow manufacturing process margin and investigate the crystallization mechanisms of PLZT during PDA.
研究成果
The Pt bottom electrode grown on an AlOx layer can suppress the formation of randomly oriented PLZT grains near the PLZT surface and increases the optimal O2 content range from 2 to 50%, enlarging the manufacturing process margin of PDA. The AlOx layer blocks the PbOx diffusion from PLZT to SiO2 interlayers through Pt and promotes pyrochlore-perovskite transformation near the bottom electrode during PLZT-PDA.
研究不足
The study is limited to the specific materials and conditions used, such as the PLZT composition and the annealing conditions. The findings may not be directly applicable to other materials or processing conditions.
1：Experimental Design and Method Selection:
The study involved the preparation of specimens with different bottom electrode structures and varying O2 content in PLZT-PDA to investigate the crystallization mechanisms of PLZT.
2：Sample Selection and Data Sources:
Five kinds of specimens (specimens A–E) were prepared with different bottom electrode structures and Pt-PDA atmospheres.
3：List of Experimental Equipment and Materials:
The study used X-ray diffraction (XRD) and hard X-ray photoelectron spectroscopy (HAXPES) measurements at the undulator beamline BL16XU of SPring-8, and SIMS measurements using a CAMECA
4：Experimental Procedures and Operational Workflow:
45 The specimens were prepared by depositing PLZT on different bottom electrodes, followed by PLZT-PDA at varying O2 contents. The crystal growth process was investigated using XRD, and the out-diffusion of atoms was examined by HAXPES and SIMS.
5：Data Analysis Methods:
The XRD intensities were analyzed to understand the crystal orientation of PLZT, and the HAXPES and SIMS data were used to study the diffusion of atoms.
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