研究目的
To develop a process for the preparation of indium phosphide substrates for the growth of perfect buried channel laser diode nano-heterostructures and photodiodes operating in the wavelength range 1210–1670 nm.
研究成果
An optimal process for preparing indium phosphide substrates involves two-step chemical–mechanical polishing on both sides using zeolite slurries, followed by chemical polishing in a mixture of bromine and isopropanol. This method ensures a flat and uniform surface, free from scratches and stripes, suitable for epitaxial growth of heterostructures.
研究不足
The study did not use bromine–methanol mixtures due to their high toxicity, potentially limiting the exploration of all possible chemical etchants. The thickness of the polishing-induced surface deformation layer was a concern, and the process required careful control to avoid indium phosphide dissociation at high temperatures.
1：Experimental Design and Method Selection:
The study involved an integrated approach to preparing indium phosphide substrates, focusing on surface morphology and condition, and testing various chemical etchants.
2：Sample Selection and Data Sources:
Substrates were produced using both n- and p-type Czochralski-grown indium phosphide single crystals.
3：List of Experimental Equipment and Materials:
Equipment included a DRON-
4：0 X-ray diffractometer, Almaz-4 machine, MSh-259 polisher, ZhK-1409 polisher, JEOL JSM-840 scanning electron microscope, and PHI-551 spectrometer. Materials included zeolite slurries, bromine, isopropanol, and various chemical etchants. Experimental Procedures and Operational Workflow:
The process involved cutting, lapping, polishing with diamond paste, and final polishing with zeolite slurries, followed by chemical etching and surface examination.
5：Data Analysis Methods:
Surface quality was assessed through optical and cathodoluminescence microscopy, and Auger electron spectroscopy.
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