研究目的
To analyze the scintillation properties of Ce:Gd3Al2Ga3O12 (GAGG) dependent on linear energy transfer (LET) and elucidate the basic process underlying the excited-state dynamics responsible for the LET dependence.
研究成果
The rise in the scintillation temporal profiles was slow at high LET, whereas the decay did not significantly depend on LET. The slow rise at high LET could be explained by competition among multiple excited states for energy transfer to a nearby Ce3+ ion, leading to failure in energy transfer for some of the excited states. Subsequent competition occurred among the residual excited states for energy transfer to the Ce3+ ions located far from the original position of the excited states, followed by quenching.
研究不足
The study focuses on the scintillation properties of Ce:GAGG under specific conditions and does not explore the full range of possible LET effects or other materials. The explanation for the slow rise at high LET is based on a proposed model that may require further validation.
