研究目的
To present recent developments in Scanning Microwave Microscopy for investigation of 2D materials and buried dopant structures, and introduce a new methodology termed wideband Electrostatic Force Microscopy for investigating frequency dependent electrical properties.
研究成果
SMM allows for quantitative electrical characterization of nanoscale electronic devices and 2D materials, and could aid the development of fabrication processes for surface code quantum computers. wb-EFM complements SMM by extending the available frequency range from the GHz down to the kHz frequency range.
研究不足
The imaging resolution depends on SMM tip size and depth of dopant layers, with reduced carrier mobility observed for shallow dopant layers.
1：Experimental Design and Method Selection:
Utilizes Scanning Microwave Microscopy (SMM) and wideband Electrostatic Force Microscopy (wb-EFM) for nanoscale spatial resolution and broadband electrical measurement capabilities.
2：Sample Selection and Data Sources:
2D materials like graphene and semiconductor MoS2, and ultimately thin patterned layers of dopants.
3：List of Experimental Equipment and Materials:
Conductive AFM-tip, VNA for SMM, and amplitude modulated excitation voltage for wb-EFM.
4：Experimental Procedures and Operational Workflow:
Application of a bias to the sample for SMM, and amplitude modulation of the excitation voltage for wb-EFM.
5：Data Analysis Methods:
Extraction of sample properties like conductivity, dopant concentration, and dielectric properties from S11 reflection signal and electrostatic force measurements.
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