研究目的
Investigating the temperature of the current filament that forms upon switching in GeSbTe thin-film samples and its association with voltage oscillations and the phase transition to the crystalline state.
研究成果
The study concludes that voltage oscillations across GeSbTe thin-film samples after switching are associated with the formation and gradual cooling of a hot current filament. The characteristic filament temperature corresponds to the phase transition to the crystalline state, supporting the notion that crystallization occurs in the high-temperature region inside the current filament.
研究不足
The study is limited to thin-film samples of the GeSbTe system and does not explore the effects of different materials or structures. The estimation of filament temperature assumes constant filament sizes and neglects the influence of electron processes at low voltages.
1：Experimental Design and Method Selection:
The study involved measuring the current–voltage characteristics of thin-film samples of the GeSbTe system in the current control mode to investigate voltage oscillations after switching.
2：Sample Selection and Data Sources:
Thin-film 'sandwich'-type structures made of CGS compositions Ge2Sb2Te5, Ge15Sb15Te70, and Ge15Sb5Te80 were prepared by thermal deposition on glass substrates with a conducting coating.
3：List of Experimental Equipment and Materials:
The measuring circuit with the current generator was used to investigate the I–V characteristics. The voltage drop across the sample was recorded using a digital oscilloscope.
4：Experimental Procedures and Operational Workflow:
The current flowing through the sample was formed in the shape of the triangular pulse, varying from 0 to Imax. The voltage drop across the sample was recorded to observe switching and formation of the memory state.
5：Data Analysis Methods:
The filament resistance and temperature were estimated based on the voltage oscillations and activation energy of conduction.
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