研究目的
Investigating the effect of passivating the charged surface states on AlGaN/GaN high electron mobility transistor (HEMT) heterostructures by using organic molecules to enhance the electrical properties of rectifying metal-semiconductor contacts on AlGaN/GaN.
研究成果
The adsorption of phenol functionalized metallated-Tetra Phenyl Porphyrin organic molecules on AlGaN/GaN HEMT heterostructures significantly enhances the electrical properties of rectifying metal-semiconductor contacts by reducing the surface potential and passivating the surface states. This innovative approach opens up a viable pathway for improving the performance and reliability of AlGaN/GaN based high electron mobility transistors.
研究不足
The study does not explain the exact mechanism at the molecule-semiconductor interface that leads to the reduction in surface charge. Additionally, the process may require optimization for different types of organic molecules and semiconductor materials.
1：Experimental Design and Method Selection:
The study involved the adsorption of phenol functionalized Zinc metallated-Tetra Phenyl Porphyrin (Zn-TPPOH) organic molecules on AlGaN/GaN via the solution phase to form a molecular layer (MoL). The presence and thickness of the MoL were confirmed using X-ray Photoelectron Spectroscopy (XPS), Spectroscopic Ellipsometry, and cross-sectional Transmission Electron Microscopy (X-TEM).
2：Sample Selection and Data Sources:
Unintentionally doped Al0.25Ga0.75N/GaN high electron mobility transistor (HEMT) epitaxial layers were grown on 2 in. diameter c-plane sapphire substrate using the Metal-Organic Vapour Phase Epitaxy (MOVPE) technique.
3：25Ga75N/GaN high electron mobility transistor (HEMT) epitaxial layers were grown on 2 in. diameter c-plane sapphire substrate using the Metal-Organic Vapour Phase Epitaxy (MOVPE) technique.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment used includes XPS (SPECS; PHOIBOS HSA3500 150 R6 (HW Type 30:14) MCD-9), Variable Angle Spectroscopic Ellipsometry (VASE: J.A. Woollam Inc. Ellipsometry solutions), Kelvin Probe Force Microscopy (KPFM) (Dimension Icon microscope: Bruker Corporation, Billerica, MA, USA), and Keithley Semiconductor Characterization System (SCS-4200).
4：0).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The samples were cleaned and then dipped in the Zn-TPPOH molecular solution for 2 h. Schottky contacts were fabricated on both bare and MoL-coated samples, and their electrical characteristics were measured.
5：Data Analysis Methods:
The electrical characteristics were analyzed using the thermionic emission current equation for Schottky barrier height calculation and capacitance-voltage pro?ling for carrier concentration analysis.
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