摘要： CuInTe2 (CIT) thin ?lms were potentiostatically electrodeposited onto cadmium sul?de thin ?lms coated on ?uorine doped tin oxide (FTO) glass in an aqueous bath at 75°C by the standard three-electrode system at ?0.7 V and ?0.8 V, with respect to an Ag/AgCl reference electrode. The electrodeposited layers were heat treated at ～80°C in air ambient for 60 min. X-ray diffraction pattern and Raman analysis con?rmed the formation of chalcopyrite CIT thin ?lms upon heat treatment. The optical band gap of heat treated CIT ?lms was found to be ～1.0 eV and 0.95 eV deposited at ?0.7 V and ?0.8 V, respectively. Compact and good adhesive growth of CIT layers onto CdS coated FTO substrates is con?rmed by ?eld emission scanning electron microscopy. The current density–voltage (J–V) and capacitance–voltage (C–V) measurement was studied to understand the electronic quality of material for development of CIT layers for solar cell applications. The current density was found to be increased by two orders of magnitude upon low-temperature heat treatment. The capacitance–voltage measurement showed sharp depletion and accumulation region. The built in potential was found to be ～60 mV and 145 mV in the as-deposited samples, deposited at ?0.7 V and ?0.8 V, respectively, whereas upon heat treatment it shifted to 159 mV and 210 mV. The capacitance of the CIT ?lms was found to be a function of applied bias and increased with increasing the bias voltage. The depletion width of the heat treated sample was found to be ～20 nm and 200 nm for the sample deposited at ?0.7 V and ?0.8 V, respectively. Thus, the sample deposited at ?0.8 V shows optimum electronic properties and is found to be suitable for optoelectronic applications.