研究目的
Investigating the effect of porous silicon substrate on the structural, mechanical, and optical properties of ruthenium oxide nanolayers deposited via MOCVD and ALD techniques.
研究成果
RuO2 thin layers on PSi substrate were synthesized using MOCVD and ALD techniques. The study established the relation between structural, mechanical, and optical properties of RuO2/PSi, highlighting the influence of deposition technique on these properties. The energy gap values of RuO2 are determined by structural defects, mechanical stresses, and quantum confinement effect.
研究不足
The study focuses on the comparison between MOCVD and ALD techniques for RuO2 deposition on PSi, with limitations including the specific conditions of deposition and the focus on structural, mechanical, and optical properties without extensive application testing.
1:Experimental Design and Method Selection:
RuO2 nanolayers were grown on n-type porous silicon (PSi) by MOCVD and ALD. The morphology, mechanical and optical properties were studied using SEM, TEM, EDX, XRD, XPS, micro-Raman spectroscopy, diffuse reflectance and PL spectroscopy.
2:Sample Selection and Data Sources:
Initial PSi structures were fabricated by metal assisted-chemical etching process (MACE) applied to n-type (100) 1-10 Ω·cm silicon wafer.
3:List of Experimental Equipment and Materials:
SEM (JEOL, JSM7001F), TEM (JEOL ARM 200F), XRD (PANalytical, X’pert3 pro-MRD diffractometer), XPS, micro-Raman spectrometer (Renishaw), UV?vis spectrophotometer (lambda 950 UV/vis/NIR).
4:Experimental Procedures and Operational Workflow:
PSi samples were prepared by MACE, followed by RuO2 deposition via MOCVD and ALD. Characterization was performed using the listed equipment.
5:Data Analysis Methods:
Data analysis included Debye – Scherrer and Williamson - Hall calculations for nanocrystallite size and deformations, Kubelka-Monk formula for band gap estimation, and XPS for chemical composition analysis.
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