研究目的
To investigate the photoresponse and capacitor properties of Cu2WSe4 nanosheets as interfacial layers between Au metal and p-Si.
研究成果
The Au/Cu2WSe4/p-Si device exhibited good rectifying properties and photoresponse to light illumination, making it suitable for photodiode, photodetector, and capacitor applications. The device's electrical properties were strongly dependent on frequency and voltage.
研究不足
The study is limited to the characterization of Au/Cu2WSe4/p-Si devices under specific conditions. The effects of other interfacial materials or different synthesis methods were not explored.
1：Experimental Design and Method Selection:
Cu2WSe4 nanosheets were synthesized by the hot-injection method and used as interfacial layers between Au metal and p-Si by spin coating technique. I-V and C-V measurements were performed to investigate their photoresponse and capacitor properties.
2：Sample Selection and Data Sources:
p-type Si wafers were used as the semiconductor material. The synthesized Cu2WSe4 solution was deposited on the front surfaces of the Si wafers.
3：List of Experimental Equipment and Materials:
Bruker D8 X-ray diffractometer, JEOL JEM-2100 TEM, Zeiss-Evo model SEM-EDX, Fytronix FY-5000 for I-V measurements, Keithley 4200 for C-V measurements.
4：Experimental Procedures and Operational Workflow:
The Si wafers were cleaned and Al layer was evaporated for ohmic contact. Cu2WSe4 solution was deposited on the Si wafers and Au layer was vaporized as rectifying contact. I-V and C-V measurements were performed under dark and illumination conditions.
5：Data Analysis Methods:
Diode parameters such as ideality factor, barrier height, and series resistance were extracted from I-V measurements. C-V measurements were analyzed for various frequencies and voltages.
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