研究目的
To propose an original method that permits to extract the minority di?usion length map from an unique EBIC picture, with the possibility to study non-uniformly doped sample.
研究成果
A novel method has been developed in order to extract a minority carrier di?usion length map on semiconductor devices, from an unique EBIC picture. The results are in a good agreement with what is expected according to the sample design, and the TCAD simulation looks similar to the measurement, although the absolute di?usion lengths are di?erent.
研究不足
The weak EBIC signal which requires to use very sensitive ammeter, and the fact that the minority carrier di?usion length can be extracted in an absolute way only on the ?rst two P layers. The measurement of thin epitaxy or doping layers can generate an underestimation of the di?usion length because its extraction is performed outside recommended conditions.
1：Experimental Design and Method Selection:
The method is based on one Electron-Beam Induced Current (EBIC) acquisition and on the analyze of the EBIC signal slope variation on each scanned points.
2：Sample Selection and Data Sources:
Measurements are performed on a sample including an array of pinned photodiodes manufactured on a deep submicrometer CMOS imaging process.
3：List of Experimental Equipment and Materials:
EBIC acquisitions are performed on a tungsten ?lament FEI Inspect S-50 SEM, and the beam accelerating voltage is set to 10 keV. A SRS 570 current preampli?er is connected to the SEM video input to visualize the EBIC signal.
4：Experimental Procedures and Operational Workflow:
The photodiodes array is cut o? and polished with SiC sandpaper and an alumina colloidal solution (
5：1 μm), and ?nally bonded on a package which is mounted on the SEM holder. Data Analysis Methods:
The EBIC signal slope variation is computed on each point, which allows to deduct the minority carrier di?usion length.
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