研究目的
Investigating the performance improvement of perovskite-IGZO phototransistors by inserting a PCBM or PCBM:PMMA interlayer to prevent IGZO damage during fabrication and enhance charge transfer for photo sensing.
研究成果
The insertion of a PCBM or PCBM:PMMA interlayer between the patterned MAPbI3 and IGZO effectively prevents IGZO damage during fabrication and enhances the phototransistor's performance, achieving high detectivity and suppressed dark current. This approach highlights the significance of interface engineering in developing high-performance and reliable hybrid phototransistors.
研究不足
The study focuses on the integration of perovskite with IGZO TFTs and the effect of PCBM interlayers, but does not explore the long-term stability under continuous operation or the scalability of the fabrication process for industrial applications.
1：Experimental Design and Method Selection:
Fabrication of coplanar structure IGZO TFT with a PCBM or PCBM:PMMA interlayer and patterned MAPbI3 perovskite layer.
2：Sample Selection and Data Sources:
Use of P++-doped Si wafer with SiO2 coating for TFT fabrication.
3：List of Experimental Equipment and Materials:
Molybdenum for electrodes, IGZO film, PCBM solution, PbI2, MAI solution, and various characterization tools including SEM, UV–vis spectrophotometer, XRD, PL spectra, and Agilent B1500 semiconductor parameter analyzer.
4：Experimental Procedures and Operational Workflow:
Detailed steps for TFT fabrication, interlayer application, perovskite layer formation, and device characterization.
5：Data Analysis Methods:
Calculation of responsivity and detectivity, analysis of transfer characteristics, and transient response measurements.
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