研究目的
Investigating the interfacial properties of atomic layer deposited AlN on n-GaN substrate to understand the effects of AlN thickness on interface state density and AlN formation near the AlN/GaN interface.
研究成果
The study concluded that a 24 nm thick AlN layer on n-GaN substrate exhibits lower interface state density and better AlN formation near the interface compared to a 7.4 nm thick layer. The observed peak shift in the Al 2p core level spectra with increasing AlN thickness suggests strain relaxation due to lattice mismatch between AlN and GaN.
研究不足
The study is limited to the investigation of AlN layers of two specific thicknesses (7.4 nm and 24 nm) on n-GaN substrates. The effects of other thicknesses or different substrate materials were not explored.
1：Experimental Design and Method Selection:
The study involved depositing AlN layers of varying thicknesses (
2：4 nm and 24 nm) on n-GaN substrates using thermal atomic layer deposition (ALD) to investigate their interfacial and electrical properties. Sample Selection and Data Sources:
Undoped, c-plane (0001) GaN wafers were used as starting materials.
3：List of Experimental Equipment and Materials:
Equipment included an ALD chamber, FS-1 multi-wavelength ellipsometers for thickness measurement, HP 4284A LCR meter for CeV measurements, and a monochromatic Al Κα X-ray source for XPS measurements. Materials included Trimethylaluminum (TMA) and NH3 as precursors.
4：Experimental Procedures and Operational Workflow:
After cleaning, samples were loaded into the ALD chamber, heated to 350 °C, and AlN was deposited. Electrical characteristics were examined using fabricated diodes with Pt Schottky and Al back contacts.
5：Data Analysis Methods:
CeV and XPS data were analyzed to determine interface state density and chemical composition near the AlN/GaN interface.
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