摘要： The operation of the terahertz quantum cascade lasers (THz QCL) is strongly dependent on the repeatable fabrication of the well and barrier layers with the certain thicknesses throughout the whole active region stack epitaxial growth. This emphasizes the importance of the strict control of the growth rates and the stability of Si and group III effusion cell fluxes during growth [1]. It was reported [2] that two THz QCLs based on nominally identical multilayer heterostructures Al0.15Ga0.85As/GaAs emit at the different frequencies of 2.59 and 2.75 THz because of unintentional small deviations in the GaAs and AlAs growth rates (4 and 1.6 % respectively). Authors [3] determined the thickness tolerance for working lasing heterostructures to be minimally above 2% while the structures with thickness deviation 4.3 and 6.5 % are not lasing. In [4] the Ga cell temperature has to be increased to maintain a GaAs constant growth rate while the Al cell temperature remains nearly constant because variation in AlAs growth rate can be neglected. By using such growth rate compensation technique the two nominally identical structures approximately 10 mkm overall thick were found to show thickness difference of ~ 1 %. Thus calibration procedures and accurate analysis techniques become crucial to provide enhanced metrology possibilities.