研究目的
Investigating the role of substrate temperature on the structure and microstructure of CuInSTe thin films and the dependencies of dielectric and structural properties on deposition conditions.
研究成果
The study concluded that the structure of CuInSTe thin films transitions from amorphous to polycrystalline with increasing substrate temperature. The AC activation energy and dielectric properties were found to be dependent on both substrate temperature and frequency. The CuInSTe/CdS heterojunction prepared at 423K showed the best electrical characteristics under illumination, making it suitable for solar cell applications.
研究不足
The study is limited by the range of substrate temperatures (293-423K) and frequencies (100Hz-10MHz) investigated. Potential areas for optimization include exploring a wider range of temperatures and frequencies.
1：Experimental Design and Method Selection:
The study involved preparing CuInSTe thin films at various substrate temperatures using thermal evaporation method and investigating their structural and dielectric properties.
2：Sample Selection and Data Sources:
High purity elements (Cu, In, S, Te) were used to prepare bulk samples by quenching technique. Thin films were deposited on glass substrates at different temperatures.
3：List of Experimental Equipment and Materials:
Equipment included an electronic balance, Heresies electronic oven, Edward Coating unit model 306A, Shimadzu XRD-6000 X-ray diffractometer, AA3000 atomic force microscope, and Hewlett-Packard HP4274A & HP4275A dielectric analyzer.
4：Experimental Procedures and Operational Workflow:
The bulk samples were prepared by sealing the elements in evacuated quartz ampoules, heating, and quenching. Thin films were deposited using thermal evaporation, and their properties were analyzed using XRD, AFM, and dielectric measurements.
5：Data Analysis Methods:
Data analysis involved estimating crystal size using Debey-Scherrer's formula, analyzing AC conductivity, and determining dielectric constants and loss.
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