研究目的
Investigating the formation of light-emitting defects in GeO/SiO2 heterostructures through swift heavy ion irradiation and their potential applications in optoelectronics.
研究成果
SHI irradiation of GeO/SiO2 heterostructures does not lead to the formation of Ge-Ge bonds but causes intermixing of GeO and SiO2 layers, resulting in strong photoluminescence in the visible range and a new infrared luminescence band. These findings suggest the potential for defect engineering in Ge-based materials for optoelectronic applications.
研究不足
The study did not observe the expected decomposition of GeOx into Ge and GeO2 under SHI irradiation, which was surprising given previous findings in similar systems. The origin of the high-brightness light in the range from 2 to 3 eV needs further clarification. The long-wavelength cutoff of the detector limited the observation of possible contributions at longer wavelengths.
1：Experimental Design and Method Selection:
The study involved the modification of GeOx films and GeO/SiO2 multilayer heterostructures using swift heavy ion (SHI) irradiation with 167 MeV Xe+26 ions at various fluences. The aim was to investigate the structural changes and photoluminescence properties induced by the irradiation.
2：Sample Selection and Data Sources:
Samples were prepared by evaporating GeO2 powder or alternating evaporations of GeO2 and SiO2 powders in high vacuum onto Si(001) substrates. The samples included a 100 nm thick GeOx film capped by a 100 nm thick SiO2 layer and a multilayer sample with 20 periods of GeOx(5nm)/SiO2(5nm) layers.
3：List of Experimental Equipment and Materials:
The irradiation was performed using a cyclotron at FLNR JINR, Dubna. Characterization techniques included Raman spectroscopy, Fourier transform infrared (FTIR) absorption spectroscopy, and photoluminescence (PL) spectroscopy. A He-Cd laser (325 nm line) was used for PL excitation.
4：Experimental Procedures and Operational Workflow:
The samples were irradiated with varying fluences of Xe ions. Post-irradiation, the samples were analyzed using Raman and FTIR spectroscopy to study structural changes and PL spectroscopy to assess optical properties.
5：Data Analysis Methods:
The Raman spectra were corrected for substrate contribution. PL spectra were corrected for detector response. The data were analyzed to understand the formation of defects and their impact on photoluminescence.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
