研究目的
Investigating the erroneous assumption of equivalent DC and high frequency electrical characteristics in metal-multiple-insulator-metal diodes and demonstrating the correct method for voltage division across insulator layers.
研究成果
The study concludes that resistive voltage division is the correct method for analyzing double-insulator MIM diodes at DC, contrary to the commonly used capacitive voltage division method. It demonstrates a significant change in I(V) characteristics between DC and high frequencies for double-insulator diodes, emphasizing the inability to use DC characteristics for high frequency behavior prediction.
研究不足
The study highlights the technical constraints of using DC characteristics to predict high frequency behavior in multi-insulator MIM diodes. Potential areas for optimization include the accurate determination of material properties and the development of more precise simulation models.
1：Experimental Design and Method Selection:
The study involved fabricating single and double-insulator MIM diodes to compare their DC and high frequency characteristics. Theoretical models and simulations were used to analyze voltage division across insulator layers.
2：Sample Selection and Data Sources:
Fabricated diodes included single-insulator (Ni/NiO/CrAu) and double-insulator (Ni/NiO/Al2O3/CrAu) structures. Data was collected through DC I(V) measurements and optical response measurements under 10.6 μm illumination.
3：6 μm illumination. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included a 4-point probe setup for DC measurements, a pulsed CO2 laser for optical measurements, and SEM for diode area calculation. Materials included Ni, NiO, Al2O3, Cr, and Au.
4：Experimental Procedures and Operational Workflow:
DC characteristics were measured using a 4-point probe setup. Optical responses were measured under 10.6 μm illumination to assess high frequency behavior. Simulations were conducted to fit measured data and predict high frequency characteristics.
5：6 μm illumination to assess high frequency behavior. Simulations were conducted to fit measured data and predict high frequency characteristics. Data Analysis Methods:
5. Data Analysis Methods: Exponential fitting was applied to DC I(V) data to eliminate noise. Simulations used resistive and capacitive voltage division models to analyze diode behavior at DC and high frequencies.
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function generator
Agilent 33220A
Agilent
Used for pulse width modulation of the CO2 laser.
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shutter
SH05
ThorLabs
Used to monitor the noise level under dark conditions.
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half-wave plate
PRM1Z8
ThorLabs
Used to rotate the laser polarization with respect to the antenna axis.
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Ni
Used as a metal contact in the MIM diode structure.
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NiO
Used as an insulator layer in the MIM diode structure.
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Al2O3
Used as an insulator layer in the double-insulator MIM diode structure.
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Cr
Used as a metal contact in the MIM diode structure.
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Au
Used as a metal contact in the MIM diode structure, chosen for its low loss tangent at optical frequencies.
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CO2 laser
Synrad 48-1SWJ
Synrad
Used for illuminating the rectenna with 10.6 μm linearly polarized radiation.
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lock-in amplifier
SR830
Used for reference generation in the optical measurement setup.
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