研究目的
Investigating the resistive switching (RS) behaviors of the Ta/[C/BaTiO3/C]/Si device in the dark and under white-light illumination with various power densities for potential application in optical control non-volatile memory.
研究成果
The Ta/[C/BaTiO3/C]/Si device exhibits significant bipolar RS effect, enhanced by white-light illumination, with a high off/on ratio and good endurance. The introduction of carbon films improves the RS effect, suggesting potential for light-controlled non-volatile memory applications.
研究不足
The study focuses on the effects of white-light illumination on RS behaviors, but the underlying mechanisms, especially the role of carbon films, require further investigation. The stability and scalability of the device for practical applications also need to be addressed.
1：Experimental Design and Method Selection:
The study involves the preparation of Ta/[C/BaTiO3/C]/Si devices using magnetron sputtering and investigating their RS behaviors under different conditions.
2：Sample Selection and Data Sources:
N-type conductive silicon substrates were used, with materials obtained through commercial channels.
3：List of Experimental Equipment and Materials:
Magnetron sputtering system, BaTiO3 and carbon targets (purity over
4：99%), common incandescent lamp as a light source, radiometer for measuring white-light intensity. Experimental Procedures and Operational Workflow:
Deposition of multilayer films on silicon substrates, measurement of I-V characteristics under dark and illuminated conditions, analysis of RS behaviors.
5：Data Analysis Methods:
Analysis of I-V curves, fitting results using a classical trap-controlled space-charge-limited current (SCLC) model.
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