研究目的
Investigating the effect of thermal treatment and annealing on the photoluminescence efficiency of GeSe ultrathin slabs.
研究成果
Thermal treatment and annealing under 200 °C significantly enhance the photoluminescence intensity of GeSe ultrathin slabs by reducing surface roughness and removing Se vacancies. The study highlights the importance of surface quality in photoluminescence efficiency and suggests potential applications in optoelectronic devices.
研究不足
The study is limited to the effects of thermal treatment and annealing on GeSe ultrathin slabs within the temperature range of 100 °C to 250 °C. The mechanism of PL enhancement is not fully understood, and the study suggests further investigation into the role of surface smoothness and Se vacancies.
1：Experimental Design and Method Selection:
The study involved thermal treatment and annealing of GeSe ultrathin slabs under different temperatures to observe changes in photoluminescence intensity. Theoretical simulations were also conducted to understand the structural changes.
2：Sample Selection and Data Sources:
GeSe ultrathin slabs were prepared using mechanical stripping and laser thinning technology on SiO2/Si substrate.
3：List of Experimental Equipment and Materials:
AFM (Bruker, Dimension Icon SPM), SEM (JSM-7800F), laser confocal scanning microscope system, Andor spectrograph (Andor iDus 416).
4：6).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Samples were annealed in high vacuum under different temperatures, then cooled naturally to room temperature. PL characterization was performed under consistent conditions.
5：Data Analysis Methods:
The intensity of PL spectra for A, B, and C exciton peaks was analyzed. MD simulations based on DFT were used to study structural roughness and Se vacancies.
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