研究目的
Investigating the enhancement of responsivity in β-Ga2O3 metal-semiconductor-metal photodiodes through nanoscale groove texturing using room temperature inverse metal-assisted chemical etching.
研究成果
The MacEtch-textured surface of β-Ga2O3 provides a competitive advantage over the planar surface for photodiode application, showing enhanced photocurrent and increased dark current simultaneously. The method opens the door for producing more sophisticated device structures for β-Ga2O3 without resorting to conventional dry etch and potential damage.
研究不足
The textured surface shows ～10% oxygen deficiency, leading to a reduced Schottky barrier height and increased dark current. The mechanism for remote I-MacEtch is not completely clear.
1：Experimental Design and Method Selection:
The study employed metal-assisted chemical etching (MacEtch) at room temperature to create nanoscale groove textures on β-Ga2O3 surfaces.
2：Sample Selection and Data Sources:
Unintentionally doped (010) β-Ga2O3 substrates were used, patterned by standard photolithography.
3：List of Experimental Equipment and Materials:
Equipment included a scanning electron microscope (SEM, Hitachi S-4700), atomic force microscopy (AFM, Digital Instruments Nanoscope IIIa Multimode), and x-ray photoelectron spectroscopy (XPS, Kratos Axis ULTRA). Materials included Pt film, HF, and K2S2O
4：Experimental Procedures and Operational Workflow:
Pt patterns were formed on the substrate, which was then immersed in a mixture of HF and K2S2O8 under UV illumination. The etched morphology was inspected by SEM and AFM.
5：Data Analysis Methods:
Surface stoichiometry and band-gap energy were measured by XPS. Surface reflection spectra were recorded, and the photoresponse of the photodiodes was measured.
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