研究目的
To eliminate light-shield layers (LSLs) in photosensitive inverters by employing GaN driver FETs with a high energy bandgap, thereby improving the performance and reliability of the inverters under visible light exposure.
研究成果
The study successfully demonstrates LSLs-free full swing photosensitive inverters with GaN driver-FETs, showing improved performance in terms of voltage gain degradation and noise margin shift compared to previous platforms using MoS2 FETs with LSLs. This advancement simplifies the process for stacking different numbers of layers of MoS2 and enhances the reliability of light-to-frequency conversion circuits (LFCCs).
研究不足
The study does not address the potential impact of environmental factors other than light on the performance of the inverters. Additionally, the fabrication process of GaN FETs may involve higher costs compared to traditional methods.
1：Experimental Design and Method Selection:
The study employs GaN driver FETs with a high energy bandgap in photosensitive inverters to eliminate the need for LSLs. The methodology includes the fabrication and characterization of these inverters under various light conditions.
2：Sample Selection and Data Sources:
Multi-layered MoS2 FETs are used as loads, and GaN FETs are used as drivers. The samples are fabricated and their electrical properties are characterized under dark and LED illuminated environments.
3：List of Experimental Equipment and Materials:
The fabrication involves mechanical exfoliation of MoS2 layers, deposition of gold electrodes, and implementation of GaN FETs. The characterization is performed using LED illumination at fixed luminance.
4：Experimental Procedures and Operational Workflow:
The inverters are fabricated and their voltage transfer characteristics (VTCs) are evaluated under different illumination conditions. Load-line analysis is used to understand the VTC characteristics.
5：Data Analysis Methods:
The performance of the inverters is analyzed in terms of voltage gain and noise margin under different illumination conditions.
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