研究目的
Investigating the formation and properties of A3B5 semiconductors highly doped with iron, focusing on their ferromagnetic properties and conductivity types.
研究成果
The study demonstrated that A3B5 semiconductors highly doped with iron exhibit ferromagnetic properties at room temperature, with the type of conductivity remaining unchanged. The PLD method is effective for creating these materials, which have potential applications in spintronic devices.
研究不足
The study is limited to the PLD method for doping A3B5 semiconductors with iron and does not explore other doping methods. The exact mechanism of exchange interaction in A3B5 : Fe semiconductors requires further studies.
1：Experimental Design and Method Selection:
The study used pulsed laser deposition (PLD) to grow layers of InAs, InSb, and GaSb semiconductors doped with iron on GaAs (100) substrates. The best temperatures for layer formation were determined.
2：Sample Selection and Data Sources:
The samples were prepared with varying Fe concentrations and substrate temperatures.
3：List of Experimental Equipment and Materials:
A 532-nm YAG : Nd laser was used for evaporation, and various analytical methods including AFM, reflection spectroscopy, Hall effect measurements, and magnetooptical effects were employed.
4：Experimental Procedures and Operational Workflow:
The layers were grown at different temperatures and Fe concentrations, followed by characterization of their structural, electrical, and magnetic properties.
5：Data Analysis Methods:
The data were analyzed to determine the ferromagnetic properties and conductivity types of the doped layers.
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