研究目的
Investigating the electronic transport properties of (Se80Te20)100-xZnx (2≤x≤6) chalcogenide alloys and the influence of Zn doping on these properties.
研究成果
The study concludes that Zn doping significantly influences the dielectric properties and a.c. conductivity of the Se-Te-Zn alloys. The correlated barrier hopping (CBH) model successfully describes the observed frequency, temperature, and composition response of ac conductivity. The material shows potential for various non-linear optical properties and applications due to its improved optical qualities with lesser defect states at higher Zn concentrations.
研究不足
The study is limited to the frequency range of 50 Hz–500 KHz and temperature range of 400-520 K. The influence of Zn doping is only studied up to x=6.
1：Experimental Design and Method Selection:
The study involves the preparation of bulk chalcogenide alloys using melt quenching technique and the investigation of their electronic transport properties.
2：Sample Selection and Data Sources:
Highly pure Se, Te, and Zn were used to prepare the alloys.
3：List of Experimental Equipment and Materials:
Panalytical's X'Pert Pro X-ray diffractometer for XRD analysis, 'Hioki 3532-50 LCR Hi TESTER' for measuring ac conductivity.
4：Experimental Procedures and Operational Workflow:
The alloys were prepared by sealing the materials under vacuum, heating in a muffle furnace, and quenching in ice-cooled water. The electrical properties were measured using pellets pressed from the powdered alloys.
5：Data Analysis Methods:
The data was analyzed using various theoretical models to understand the conduction mechanism.
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