摘要： In this study, the ?lling process of high aspect ratio through-silicon-vias (TSVs) under dense conditions using the electroplating method was ef?ciently achieved and optimized. Pulsed power was used as the experimental power source and the electroplating solution was prepared with various additive concentrations. Designed control variable experiments were conducted to determine the optimized method. In the control variable experiments, the relationship of multiple experimental variables, including current density (0.25–2 A/dm2), additive concentration (0.5–2 mL/L), and different shapes of TSVs (circle, oral, and square), were systematically analyzed. Considering the electroplating speed and quality, the in?uence of different factors on experimental results and the optimized parameters were determined. The results showed that increasing current density improved the electroplating speed but decreased the quality. Additives worked well, whereas their concentrations were controlled within a suitable range. The TSV shape also in?uenced the electroplating result. When the current density was 1.5 A/dm2 and the additive concentration was 1 mL/L, the TSV ?lling was relatively better. With the optimized parameters, 500-μm-deep TSVs with a high aspect ratio of 10:1 were fully ?lled in 20 h, and the via density reached 70/mm2. Finally, optimized parameters were adopted, and the electroplating of 1000-μm-deep TSVs with a diameter of 100 μm was completed in 45 h, which is the deepest and smallest through which a three-dimensional inductor has ever been successfully fabricated.