研究目的
Investigating the evolution of the electronic structure of (Bi1?xInx )2Se3 bulk single crystals around the critical point of the trivial to topological insulator quantum-phase transition.
研究成果
The study reveals that gapped surface states with nonzero spin polarization exist on both sides of the topological to trivial quantum-phase transition in (Bi1?xInx )2Se3. The findings show good qualitative agreement between experimental results and relativistic many-body calculations, highlighting the crucial impact of the spin-orbit interaction on the energy-momentum dispersion of the surface states. The results provide insight into the behavior of chemically tuned quantum-phase transitions from topological to trivial insulators.
研究不足
The study focuses on the electronic structure of (Bi1?xInx )2Se3 bulk single crystals and does not explore the effects of other dopants or materials. The mechanism of surface band-gap opening is proposed based on calculations and experimental results, but further experimental validation may be needed.
1:Experimental Design and Method Selection:
The study uses spin- and angle-resolved photoemission spectroscopy (ARPES) and relativistic many-body calculations to investigate the electronic structure.
2:Sample Selection and Data Sources:
(Bi1?xInx )2Se3 bulk single crystals were grown by the Bridgman method and characterized by x-ray fluorescence analysis, energy-dispersive x-ray analysis (EDX), and x-ray diffraction.
3:List of Experimental Equipment and Materials:
Photoemission experiments were carried out using p + s linearly polarized light at the UE112-PGM2 and U125/2-SGM beamlines of the synchrotron source BESSY-II in Berlin. Photoelectrons were detected with a Scienta R8000 electron analyzer. For spin analysis, a Rice University Mott-type spin polarimeter was used.
4:Experimental Procedures and Operational Workflow:
High-resolution ARPES dispersions were taken along the Γ-K direction of the surface Brillouin zone (SBZ). Spin-resolved ARPES measurements were conducted to analyze the in-plane and out-of-plane components of the spin polarization.
5:Data Analysis Methods:
The evolution of the electronic structure was analyzed using relativistic many-body calculations and GW-based tight-binding calculations of a slab of 15 quintuple layers (QLs) of Bi2Se3.
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