研究目的
To model intermodulation distortion in RF silicon photonic modulators and identify mechanisms limiting device linearity, with the aim of improving linearity in these modulators.
研究成果
The study concludes that linearizing only the index change for the low-frequency optical response is not sufficient to realize linearized RF SiP modulators. It suggests that shorter MZM arm lengths or individually driven segments could improve IMD3, especially at higher frequencies.
研究不足
The linearity of SiP modulators lags behind LiNbO3 or III-V MZMs due to the non-linear plasma dispersion effect. The study also notes that shorter MZM arm lengths are required to improve IMD3, particularly at higher frequency bands.
1：Experimental Design and Method Selection:
The study involves modeling IMD in RF silicon photonic modulators and comparing the SFDR of two MZMs to identify common IMD limitations.
2：Sample Selection and Data Sources:
Two modulators fabricated through the AIM Photonics foundry at SUNY Poly were tested.
3：List of Experimental Equipment and Materials:
The study utilized MZMs with PN and PIN junctions, an external amplified photodiode, and RF photonic link components.
4：Experimental Procedures and Operational Workflow:
The modulated optical signal was converted to an electrical signal by an external amplified photodiode, and the SFDR was measured at different frequencies.
5：Data Analysis Methods:
The study analyzed the SFDR and IIP3 of the modulators to assess their linearity and identify limitations.
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