研究目的
Physical modeling and simulation of Au/ZnO Schottky diode to investigate its electrical characteristics and compare with experimental results.
研究成果
The study successfully modeled and simulated a Schottky diode comprising of Gold (Au)/ZnO heterojunction using Minimos-NT. The electrical characteristics were studied and compared with experimental results, with reasons for discrepancies addressed. A database of ZnO parameters was developed to assist in future simulations.
研究不足
The study was restricted to 2-D simulations due to various constraints, and assumptions were made to incorporate 3D effects. The ZnO parameter model was not available in the simulator, leading to the use of parameters from literature which may not exactly represent the ZnO material used in the device.
