研究目的
To characterize and study the behavior of a partially depleted Silicon-On-Insulator MOSFET using Capacitance-Voltage measurement, extracting important parameters like gate oxide thickness, buried oxide thickness, silicon film thickness, fixed oxide charges, and interface trapped charges.
研究成果
The C-V characteristics of PD SOI MOSFET provide valuable information to evaluate the performance of MOSFET fabrication process and to model the device performance. Important parameters like SOI film thickness, GOX thickness, BOX thickness, fixed oxide charges, and interface trapped charges were derived and discussed, along with the frequency dependency effect.
研究不足
The study does not consider the polysilicon depletion effect. The hump in capacitance seen when Vbg is at 0V to 20V remains unexplained and is out of the scope of this study.
