研究目的
Investigating the reliability of 4H-SiC MOSFET during avalanche breakdown and short-circuit conditions by TCAD simulation.
研究成果
The reliability of 4H-SiC MOSFET was investigated under avalanche breakdown and short-circuit conditions. The results indicated that leakage current increases with ambient temperature while breakdown voltage remains constant. Localized electric field focalizing was observed between P-base and JFET region. Under short-circuit conditions, the device could be damaged due to metal electrodes melting and gate oxide breaking down from localized hotspots.
研究不足
The study is based on simulation, which may not fully capture all real-world operational conditions and variations. The simulation focuses on a single cell of 4H-SiC MOSFET, and the results may vary for different designs or under different conditions.
