研究目的
Investigating the technical potential of room temperature bonding of wafers in vacuum using amorphous Si (a-Si) and Ge (a-Ge) films, focusing on their bonding performance and electrical conductivity.
研究成果
The study demonstrated that a–Ge films have high bonding potential at the connected a–Ge–a–Ge interface and exhibit extremely low electrical conductivity, making them suitable for bonding wafers without affecting the electrical properties of devices on wafer surfaces. The findings suggest that ADB using a–Ge films is a promising technique for applications requiring minimal electrical interference.
研究不足
The bonding performance using amorphous films is sensitive to surface roughness values. The study suggests that enhancement of the adhesive strength of a–Ge films on wafer surfaces could improve bonding performance further.
1：Experimental Design and Method Selection:
The study utilized atomic diffusion bonding (ADB) with amorphous Si and Ge films for room-temperature wafer bonding. Transmission electron microscopy (TEM) was used for interface observation, and the surface free energy at the bonded interface was estimated using the blade-insertion method with Maszara’s equation. Electrical resistance was measured using the four-terminal method and electrical inductive method.
2：Sample Selection and Data Sources:
Micro-polished synthetic quartz glass wafers of 2-inch diameter were used. The surface roughness was evaluated using atomic force microscopy (AFM).
3：List of Experimental Equipment and Materials:
An ultra-high vacuum (UHV) DC-magnetron sputtering system was used for film deposition. Si and Ge targets with purity greater than 5N were used.
4：Experimental Procedures and Operational Workflow:
Films were deposited directly on quartz glass wafer surfaces, followed by bonding in the same vacuum. No substrate heating was conducted during deposition or bonding processes.
5：Data Analysis Methods:
The bonded interface was observed using TEM. Electrical resistance of the films was measured, and the surface free energy at the bonded interface was estimated.
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