研究目的
Demonstrating low-loss silicon-on-insulator devices for operation at wavelengths of 2 μm or longer, focusing on applications in chemical and biological sensing, free-space and fiber communication.
研究成果
The research successfully demonstrates a platform for building low-loss SOI waveguide devices for mid-infrared applications using a commercial process, highlighting the potential for increased wavelength coverage via optical comb generation with low-power CW light injection.
研究不足
The study does not control the temperature of the chip during measurements, which contributes to noise. The fabrication process, while high-yield, requires precise dimensional adjustments for longer wavelengths.
1：Experimental Design and Method Selection:
The study follows a standard process flow for fabricating silicon-on-insulator devices, with adjustments to accommodate longer wavelengths.
2：Sample Selection and Data Sources:
Uses commercially available 8-inch silicon on insulator wafers.
3：List of Experimental Equipment and Materials:
Includes deep ultra-violet photolithography, reactive ion etching, plasma enhanced chemical vapor deposition for SiO2 cladding.
4：Experimental Procedures and Operational Workflow:
Fabrication involves silicon epitaxy, hard mask deposition, patterning, etching, and cladding deposition.
5：Data Analysis Methods:
Measurements of waveguide loss and resonator quality factors are conducted using tunable external cavity lasers and spiral waveguides.
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