研究目的
To study optical properties of Sn doped Se–Te thin films, including refractive index, extinction coefficient, and optical band gap, and to understand the structural disorder through optical analysis.
研究成果
The refractive indices of the deposited films increased with increasing concentration of Sn. The extinction coefficients decreased with the increase in wavelength indicating decreased absorption at higher wavelengths. Optical band gap increased with increase in Sn concentration due to increased polarisability of atoms. The values of static refractive indices calculated using Cauchy’s fitting and single effective oscillator model were in close agreement. Dispersion energy decreased with increasing concentration of Sn.
研究不足
The study is limited to the optical characterization of Se–Te–Sn thin films within the wavelength range of 500–2500 nm. The effects of other dopants or different preparation techniques were not explored.
1：Experimental Design and Method Selection:
Conventional melt quenching technique was used for the preparation of bulk samples of Se85?xTe15Snx (x = 0, 3, 6) system. Thin films were deposited using thermal evaporation technique. XRD analysis confirmed the amorphous nature of the samples. Optical characterization was carried out using transmission spectra in the range of 500–2500 nm.
2：Sample Selection and Data Sources:
Constituent elements (5 N) were weighed according to their atomic percentage and sealed in an evacuated quartz tube. The ampoules were heated to 900 °C for 48 h to ensure homogeneous mixing.
3：List of Experimental Equipment and Materials:
Quartz tube, thermal evaporation setup, ultrasonically cleaned glass substrate, quartz crystal monitor, UV–Vis–NIR spectrophotometer.
4：Experimental Procedures and Operational Workflow:
Bulk samples were prepared by heating and quenching. Thin films were deposited on glass substrates in a vacuum. Transmission spectra were recorded for optical analysis.
5：Data Analysis Methods:
Refractive indices and thicknesses were calculated using Swanepoel’s method. Optical band gap was determined using Tauc plots. Single effective oscillator model was used to analyze the dispersion behavior.
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