摘要： Present work has set about the synthesis of Tin-Diethyl dithiocarbamate Sn (S2CN (Et) 2) n]) and Copper diethyldithiocarbamate Cu (S2CN(Et)2) complex by utilizing single source method. Sn (S2CN (Et) 2) n]) complex are further used for deposition of Tin Sulphide thin films via Physical Vapor deposition with varying concentration of copper acting as dopant specie. The fabricated doped and un-doped films were confronted to functional group detection (FTIR), optical (Uv-Vis), structural (XRD) and morphological (SEM, EDX) analysis to retrieve the hidden information. FTIR peaks of Copper and Tin complex confirmed the formation of dithiocarbamate complexes by enumerating the stretching and bending vibrational modes of bonding and metal Sulphur linkage. X-ray diffraction elucidate the predominant phase of SnS with 1:1 ratio which depicted the fabrication at high temperature. Optical investigation represented the decrease in band gap by 6% extrinsic addition while increase at 10 % doping. The enhancement in band gap is also clear from the increased absorption edge upon 10% addition. Surface morphology of films was heterogeneous along flakes with compaction of spherical particles as demonstrated by SEM. The obtained results of material (SnS) being environmentally benign were therefore discussed to assess its aptness in optoelectronic devices.