研究目的
Investigating the effects of boron doping on the morphology and structural properties of diamond films prepared by HCDC-PCVD.
研究成果
The study successfully demonstrated the significant impact of boron doping on the morphology and structural properties of diamond films prepared by HCDC-PCVD. The B-doping levels were effectively controlled and characterized, showing a clear relationship between the boron flow rate and the film properties. The findings contribute to the understanding of BDD films' growth characteristics and their potential applications.
研究不足
The study does not explore the electrochemical applications of the BDD films, focusing solely on their morphological and structural properties. The effect of boron doping on the electrical properties is mentioned but not deeply investigated.
1：Experimental Design and Method Selection:
BDD films were deposited on p-Si substrates in a stainless steel chamber of the HCDC-PCVD system. The reactant gas was a mixture of high purity CH4 and H2, with trimethyl borate (B(OCH3)3) used as the boron source.
2：Sample Selection and Data Sources:
The deposition processes were conducted at a pressure of 13 kPa, with the plasma excited by a DC power supply. The substrate temperature was maintained at approximately 800 °C.
3：List of Experimental Equipment and Materials:
S-4800 SEM (Hitachi, Japan) for morphology analysis and inVia Raman spectrometer (Renishaw Corporation, UK) for Raman properties characterization.
4：Experimental Procedures and Operational Workflow:
The growth time was
5：5 hours for each sample. The morphologies and Raman properties of the BDD films were analyzed post-deposition. Data Analysis Methods:
The B-doping levels in the films were estimated from the Raman spectra using a specific relationship between the boron concentration and the wavenumber of the Lorentzian component of the 500 cm?1 peak.
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