研究目的
To model and simulate the cycle-to-cycle (C2C) current variability in SiOx-based ReRAM devices using a discrete first order autoregressive model AR(1) with long-term variation, focusing on the high resistance state current.
研究成果
An stochastic model for the C2C correlated instabilities in the HRS I-V characteristic of SiOx-based ReRAM devices based on quantum point-contact conduction was presented. The main advantage is the simplification of computations, making it appropriate for circuit simulators where microscopic physical aspects are hard to implement in detail.
研究不足
The model is not a compact model for ReRAM since it does not deal with transitions and LRS variability. It is aimed for circuit simulation environments where complex and time-consuming computations are to be avoided, limiting its applicability to detailed microscopic physical aspects of electron transport.
1：Experimental Design and Method Selection:
The study uses a discrete first order autoregressive model AR(1) with long-term variation to simulate C2C instabilities in SiOx-based ReRAM devices. The quantum point-contact model is employed for filamentary electron transport in dielectrics with fluctuating confinement potential barrier height.
2：Sample Selection and Data Sources:
ReRAM devices fabricated on Si substrates with a top layer of thermal SiO2, Mo as the bottom electrode, and SiOx thin film as the switching oxide.
3：List of Experimental Equipment and Materials:
Si substrates, thermal SiO2, Mo, SiOx thin film, Ti adhesion layer, Au top electrode.
4：Experimental Procedures and Operational Workflow:
Devices were initially electroformed with a maximum voltage ramp of -3 V and a current compliance CC=2 mA. After electroforming, devices were subjected to successive voltage sweeps: 0V→-3V→3V→0V.
5：0V.
Data Analysis Methods:
5. Data Analysis Methods: The current that flows through the device is calculated using the Landauer formula. The transmission coefficient T is approximated for an inverted parabolic barrier of height Φ(V).
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